Journal
APPLIED SURFACE SCIENCE
Volume 353, Issue -, Pages 494-498Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2015.06.135
Keywords
Nanocrystalline; Inverse Hall-Petch relation; Grain growth
Categories
Funding
- Ministry of Science and Technology of Taiwan [MOST 103-2221-E-151-001-MY3, MOST 103-2221-E-151-007-MY3]
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The nanoindentation process of single-crystal and nanocrystalline copper is studied with molecular dynamics simulations based on the many-body tight-binding potential. The grain size effect is evaluated in terms of slip vector, atomic stress, loading force, and hardness. The inverse Hall-Petch relation is found below 7 nm. With grain size smaller than 5 nm, the equivalent stress decreases quickly and stress-induced grain growth is observed in indentation process. Grain rotation is the main cause of grain coarsening for small grain sizes. For larger grain sizes, dislocations are found at the {1 1 1} close-packed plane and {1 0 0} plane. (C) 2015 Elsevier B.V. All rights reserved.
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