Journal
MATERIALS TRANSACTIONS
Volume 51, Issue 10, Pages 1905-1908Publisher
JAPAN INST METALS
DOI: 10.2320/matertrans.MAW201017
Keywords
indium tin oxide (ITO); Ink direct printing; eletrical resistance; optical transmittance carrier; concentration
Funding
- Korea government Ministry of Knowledge Economy [2008K00202]
- Ministry of Knowledge Economy (MKE), Republic of Korea [2008K00202] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Characteristics of the indium tin oxide (ITO) thin films fabricated by a direct printing method were investigated For the direct printing 30 mass% ITO ink was formulated by dispersing ITO nanoparticles of less than 10 nm in diameter into alcohol based solvent with additives Then the ITO ink was printed onto a glass substrate which was followed by the heat treatment at 350 400 500 and 600 degrees C to fabricate the sintered films Then cross section of sintered film was observed As a result the ITO thin film showed porous nanostructure Also sheet resistance of the ITO thin film decreased with increasing heating temperature The decrease of the resistance was attributed to the improvement of earner concentration in the ITO thin film In the meanwhile the optical transmittance increased in proportional to the heating temperature In case of the ITO thin film heated at 600 degrees C the improved characteristics of the electrical resistance and the optical transmittance were achieved as 2 19 x 10(3) Omega/sq and 78 6% respectively [dot 10 2320/matertrans MAW201017]
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