4.8 Review

Quantum dot field effect transistors

Journal

MATERIALS TODAY
Volume 16, Issue 9, Pages 312-325

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mattod.2013.08.011

Keywords

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Funding

  1. Research Grants Council of the Hong Kong S.A.R., China [102412, 102810, 4055012]
  2. Applied Research Grant of City University of Hong Kong [9667067]
  3. National Science Foundation of China [A.03.13.01401]

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Solution processed colloidal semiconductor quantum dots offer a high potential for decreasing costs and expanding versatility of many electronic and optoelectronic devices. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors with. quantum dots as the active layer have recently experienced a breakthrough in performance (achievement of mobilities higher than 30 cm(2) V-1 s(-1)) as a result of a proper choice of surface ligands and/or improved chemical treatment of the nanoparticle films during device processing. Here we review these innovative developments and the continuing work that may soon lead to commercial grade electronic components.

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