Journal
MATERIALS TODAY
Volume 15, Issue 6, Pages 276-285Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S1369-7021(12)70118-9
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Funding
- DOD/DMEA [H94003-10-2-1003]
- NSF-MRSEC [DMR-0820382]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
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The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a through understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer lent h scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport, and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices fir low- and high-end technology applications.
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