Journal
MATERIALS TODAY
Volume 11, Issue 1-2, Pages 22-28Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S1369-7021(07)70349-8
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The combination of extreme electronic and thermal properties found in synthetic diamond produced by chemical vapor deposition Q GM is raising considerable excitement over its potential use as a semiconductor material. Experimental studies have demonstrated charge-carrier mobilities(1) of >3000 cm(2)V(-1) s(-1) and thermal conductivities(2) >2000 Wm(-1) K-1. The material has been predicted to have a breakdown field strength in excess of 10 MVcm(-1). These figures suggest that, providing a range of technical challenges can he overcome, diamond would be particularly well suited to operation as a semiconductor material wherever high frequencies, high powers, high temperatures or high voltages are required.
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