Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 88, Issue -, Pages 250-255Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2018.08.023
Keywords
Cu/Ni co-assisted chemical etching; NSR treatment; Diamond-wire-sawn multicrystalline silicon; Antireflectance structures
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Funding
- National Natural Science Foundation of China [61774084]
- Joint Frontier Research Project of Jiangsu Province [BY2016003-09]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- open project of Key Laboratory of Silicon Based Electronic Materials of Jiangsu Province [XZWF/YF-QT-2017-0010]
- Foundation of Graduate Innovation Center in NUAA [kfjj20170802]
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In this paper, a new low cost Cu/Ni co-assisted chemical etching (Cu/Ni MACE) method was presented for fabrication of black silicon on diamond-wire-sawn multicrystalline silicon (mc-Si). The etching rate of Cu assisted chemical etching (Cu MACE) at room temperature was greatly improved by adding Ni ion solutions. A lowest average reflectivity of 10.33% in the range of wavelength 400-900 nm was obtained, with a decrease about 50% compared with that by the etching without Ni ions. The thickness reduction of the sample obtained by the Cu/Ni MACE was 3.5 times of the one of Cu MACE when rho at 40% (rho = HF/(HF + H2O2) the one prepared by the Cu MACE although the rho (rho = HF/(HF + H2O2), volume ratio) was changed with the former being about 3.5 times of the latter. Then, a tilted inverted pyramid-like structure was successfully achieved by one-step Cu/Ni co-assisted chemical etching in Si/Cu(NO3)(2)/NiSO4/HF/H2O2 solution followed by a further nano structure rebuilding treatment. Finally, tilted structure was proved to have better light trapping properties by simulation using the Finite-Difference Time-Domain (FDTD) method.
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