Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 17, Issue -, Pages 33-37Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2013.08.008
Keywords
InP; S-passivation; Photoluminescence; X-ray photoelectron spectroscopy
Categories
Funding
- National Natural Science Foundation of China [61006065, 61076039, 61204065, 61205193]
- National Key Lab of High Power Semiconductor Lasers Foundation [9140C310101120C031115]
- Research Fund for the Doctoral Program of Higher Education of China [21022216110002, 20102216110001, 20112216120005]
- Natural Science Foundation of Jilin Province [20101546]
- Developing Project of Science and Technology of Jilin Province [20090139, 20090555, 20100111, 20121816, 201201116]
- Foundation of Department of Education of Jilin Province [2011JYT05, 2011JYT10, 2011JYT11, 2012JYT21]
- Changchun International Science and Technology Cooperation Project [2010CC02]
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We report photoluminescence (PL) of indium phosphide (InP) surface passivated by sulfur (S). A three-fold enhancement of band edge emission from the bulk InP was observed after the InP was passivated by ammonium sulfide ((NH4)(2)S) solution for 10 min. X-ray photoelectron spectroscopy measurements indicate that the oxide at InP surface is removed after being sulfurized in (NH4)2S solution. However, the enhancement significantly decreases for a longer treatment time, which is maybe due to a thick S layer deposited at the InP surface resulting in low light transmission. (C) 2013 Elsevier Ltd. All rights reserved.
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