4.6 Article

Development of SnS quantum dot solar cells by SILAR method

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 27, Issue -, Pages 649-653

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2014.08.006

Keywords

Nanoparticles; Colloidal processing; Solar energy materials; Photovoltaic cells

Funding

  1. UGC, Gov. of India
  2. Department of Electronics and Information Technology, Ministry of Communications and Information Technology under a grant for the Centre of Excellence in Nanoelectronics, Phase II at Indian Institute of Science, Bangalore

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SnS quantum dot solar cell is fabricated by Successive Ionic Layer Adsorption and Reaction (SILAR) method. SnS layer is optimized by different SILAR cycles of deposition. The particle size increased with the increase in number of SILAR cycles. Cu2S coated FTO is used as counter electrode against the conventional Platinum electrode. On comparison with a cell having a counter electrodeelectrolyte combination of Platinum-Iodine, Cu2S-polysulfide combination is found to improve both the short circuit current and fill factor of the solar cell. A maximum efficiency of 0.54% is obtained with an open circuit voltage of 311 mV and short circuit current density of 4.86 mA/cm. (C) 2014 Elsevier Ltd. All rights reserved.

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