Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 16, Issue 4, Pages 1079-1085Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2013.03.012
Keywords
ZnO:Cu film; Blue-green emission; I-V characteristics; UV photosensitivity
Categories
Funding
- National Natural Science Foundations of China [10874140]
- College Basic Scientific Research Operation Cost of Gansu Province
- Scientific Research Foundation for Returned Overseas Chinese Scholars, State Education Ministry
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Cu-doped zinc oxide (ZnO:Cu) films were deposited on p-Si (100) substrates using radio-frequency reactive magnetron sputtering. The structure and optical properties of the films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and fluorescence spectroscopy. XRD and SEM results revealed that ZnO:Cu film had a better preferential orientation along the c-axis compared with pure ZnO film. The chemical state of copper and oxygen in ZnO:Cu films was investigated by XPS. The results suggest that the Cu ion has a mixed univalent and bivalent state. The integrated Cu2+/Cu+ intensity ratio increased with the O-2 partial pressure. Photoluminescence measurements at room temperature revealed a double peak in the blue regions and a green emission peak. The close relationship between the valence state of Cu ions and the blue-green emission is discussed in detail. A higher photocurrent was observed for ZnO:Cu films under UV illumination. UV photodetectors based on ZnO: Cu films have high sensitivity and fast response and recovery times. Under periodic UV illumination at 380 nm the ZnO:Cu films showed stable photocurrent growth and decay, so the films are potential candidate materials for UV photodetectors. Crown Copyright (c) 2013 Published by Elsevier Ltd. All rights reserved.
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