4.6 Article

Preparation and characterization of TiO2 thin film by thermal oxidation of sputtered Ti film

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 16, Issue 2, Pages 513-519

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2012.05.001

Keywords

Photocatalytic activity; Sputtered Ti film; Thermal oxidation; TiO2; Transmittance

Funding

  1. China Scholarship Council [2008684010]
  2. National Natural Science Foundation of China [50972059]
  3. Intergovernmental Cooperation Projects in Science and Technology of the Ministry of Science and Technology of PRC [5, 6]

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Titanium dioxide (TiO2) thin films were successfully prepared on quartz substrate by thermal oxidation of sputtered titanium film in air. The structure, composition, morphology and optical properties of oxidized TiO2 films were characterized by Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and UV-visible spectroscopy. Meanwhile, the photocatalytic activity of the films was evaluated on the basis of the degradation of methyl orange solution under UV irradiation. Ti films after oxidation present mainly in TiO2 form with a larger amount of adsorbed O-2, and oxidation temperature has a strong impact on the crystal structure and properties of the films. A phase transformation of anatase to rutile for oxidized TiO2 films occurred in the temperature range of 700-800 degrees C. The energy band gap of oxidized TiO2 films decreased first and then increased with annealing temperature. Furthermore, TiO2 film oxidized at 600 degrees C exhibited the best photocatalytic activity due to suitable crystal phase and size. These results might contribute to the synthesis of metal oxide thin films with expectant structural morphology and properties by thermal oxidation methods. (C) 2012 Elsevier Ltd. All Lights reserved.

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