Journal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume 184, Issue -, Pages 44-48Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mseb.2014.01.001
Keywords
ZnO; NiO; Nanorod; Photosensitivity; Temperature-dependent I-V
Funding
- National Natural Science Foundation of China [61376013, J1210061]
- 973 Program of China [2011CB933300]
- Research Program of Wuhan Science & Technology Bureau [2013010501010141]
- Natural Science Foundation of Jiangsu Province [BK20131186]
- Fundamental Research Funds for the Central Universities [201120202020002]
- Academic Award for Excellent Ph.D. Candidates - Ministry of Education of China [5052012202002]
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A p-NiO film/n-ZnO nanorod (NR) array heterojunction was prepared by deposition of NiO film on ZnO NRs using radio-frequency reactive magnetron sputtering. The well-aligned ZnO NRs were fabricated by a simple and economic hydrothermal method on a ZnO:Al-coated glass substrate. Good morphology and crystal properties of the fabricated ZnO NRs and NiO film were confirmed by scanning electron microscopy and X-ray diffraction. The p-n heterojunction exhibits excellent rectifying behaviour and strong temperature-dependent current-voltage properties in the range from -50 to 80 degrees C. The hybrid NR heterojunction diode shows good photosensitivity under the irradiation of 365 nm ultraviolet light. These results present potential applications in future microelectronic devices based on NiO films and the one-dimensional ZnO nanomaterials. (C) 2014 Elsevier B.V. All rights reserved.
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