Journal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume 154, Issue -, Pages 85-89Publisher
ELSEVIER
DOI: 10.1016/j.mseb.2008.08.003
Keywords
SiGe; Defects; Irradiation; DLTS
Ask authors/readers for more resources
A review is presented on irradiation-induced vacancy-type defects in relaxed Si1-xGex. The emphasis is put on results extracted from deep-level transient spectroscopy (DLTS) investigations of the vacancy, the di-vacancy, the oxygen-vacancy pair (the A-center) and the group-V-vacancy pair (the E-center). The positions of the associated levels in the band gap will in particular be followed as a function of the Ge content and, consequently, of the monotonic decrease of the band gap. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available