Journal
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
Volume 17, Issue 4, Pages 817-822Publisher
UNIV FED SAO CARLOS, DEPT ENGENHARIA MATERIALS
DOI: 10.1590/1516-1439.235713
Keywords
Sn-doped ZnO; gas sensor; photoactivation; sensing mechanism
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Funding
- Major National Science and Technology Special Projects, China [2009ZX02308-004]
- National Natural Science Foundation of China [60972106]
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Pure ZnO and 5at%, 7at%, 9at% Sn-doped ZnO materials are prepared by the chemical co-precipitation method. They were annealed by furnace at temperature range of 300-700 degrees C in air for 1h. The ZnO materials are characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the Sn-doped ZnO materials appear rough porous structures. The maximum sensitivity can be achieved by doping the amount of 7 at%. It has much better sensing performance towards ethanol vapor under visible light irradiation. The response and recovery time are similar to 1s and similar to 5s, respectively. The mechanism for the improvement in the sensing properties can be explained with the surface adsorption theory and the photoactivation theory.
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