Journal
MATERIALS RESEARCH INNOVATIONS
Volume 18, Issue -, Pages 706-710Publisher
MANEY PUBLISHING
DOI: 10.1179/1432891714Z.000000000771
Keywords
Graphene; Ethylene; Chemical vapour deposition; Pressure effect
Categories
Funding
- National Natural Science Foundation of China [11074141, 11174169, 11234007]
- Ministry of Science and Technology of China [2009CB929202]
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Graphene was grown on copper and nickel foils via chemical vapour deposition (CVD), using ethylene (C2H4) as a precursor instead of methane (CH4). Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) results confirmed that ethylene can be used in the growth of graphene. The effect of ethylene pressure on graphene growth was also observed. This study's results show that graphene can be grown on copper and nickel foils under the same growth conditions of CVD if ethylene is used as a precursor.
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