4.6 Article

Luminescence and radiation resistance of undoped NaI crystals

Journal

MATERIALS RESEARCH BULLETIN
Volume 59, Issue -, Pages 13-17

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2014.06.019

Keywords

Halide; Crystal growth; Defects; Luminescence; Radiation damage

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Undoped NaI single crystal is an excellent scintillator at low temperature. However, scintillation parameters of different quality crystals vary in a wide range, significantly exceeding measurement error. Experimental data demonstrate the features of luminescence, radiation induced coloration, and afterglow dependence on the quality of nominally pure crystals. It is found that defects level that allows to elucidate artefacts introduced by traces of harmful impurities corresponds to 3 x 10(15) cm(-3) that significantly overhead accuracy of chemical and absorption analysis. It is shown that special raw material treatment before and during the single crystal growth allows to reach NaI purity level that avoids impurities influence to the basic luminescence data. (C) 2014 Elsevier Ltd. All rights reserved.

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