Journal
MATERIALS RESEARCH BULLETIN
Volume 59, Issue -, Pages 84-92Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2014.06.021
Keywords
Nitrides; Nanostructures; Semiconductors; Optical properties; Catalytic properties
Categories
Funding
- National Natural Science Foundation of China [20803038, 21003146, 21201174, 21303238]
- Shandong Provincial Natural Science Foundation for Distinguished Young Scholar, China [JQ201305]
- Basic Research Project of the Qingdao Science and Technology Program [12-1-4-9-(6)-jch]
- Knowledge Innovation Program of the Chinese Academy of Sciences [KSCX2-EW-J-10]
- Foundation of State Key Laboratory of Coal Conversion [J13-14-603]
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In this work, modification of graphitic carbon nitride photocatalyst with acid was accomplished with a facile method through reflux in different acidic substances. The g-C3N4-based material was found to be a metal-free photocatalyst useful for the selective oxidation of benzyl alcohol with dioxygen as the oxidant under visible light irradiation. Acid modification had a significant influence on the photocatalytic performance of g-C3N4. Among all acid tested, sulfuric acid-modified g-C3N4 showed the highest catalytic activity and gave benzaldehyde in 23% yield for 4 h under visible light irradiation, which was about 2.5 times higher than that of g-C3N4. The acid modification effectively improved surface area, reduced structural size, enlarged band gap, enhanced surface chemical state, and facilitated photoinduced charge separation, contributing to the enhanced photocatalytic activity. It is hoped that our work can open promising prospects for the utilization of metal free g-C3N4-based semiconductor as visible-light photocatalyst for selective organic transformation. (C) 2014 Elsevier Ltd. All rights reserved.
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