Journal
MATERIALS RESEARCH BULLETIN
Volume 48, Issue 1, Pages 106-113Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2012.10.015
Keywords
Composites; Semiconductors; Electron microscopy; X-ray diffraction; Catalytic properties
Categories
Funding
- National Basic Research Program of China [2011CB302004]
- Natural Science Foundation of China [20973071, 51172086, 51272081, 21103060]
- Foundation for Young Talents in College of Anhui Province, China [2011SQRL072ZD]
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The efficient visible-light-sensitized Ag3PO4/ZnO composites with various weight percents of Ag3PO4 were prepared by a facile ball milling method. The photocatalysts were characterized by XRD, DRS, SEM, EDS, XPS, and BET specific area. The (OH)-O-center dot radicals produced during the photocatalytic reaction was detected by the TA-PL technique. The photocatalytic property of Ag3PO4/ZnO was evaluated by photocatalytic degradation of Rhodamine B under visible light irradiation. Significantly, the results revealed that the photocatalytic activity of the composites was much higher than that of pure Ag3PO4 and ZnO. The rate constant of RhB degradation over Ag3PO4(3.0 wt.%)/ZnO is 3 times that of single-phase Ag3PO4. The optimal percentage of Ag3PO4 in the composite is 3.0 wt.%. It is proposed that the (OH)-O-center dot radicals produced in the valence band of ZnO play the leading role in the photocatalytic degradation of Rhodamine B by Ag3PO4/ZnO systems under visible light irradiation. (C) 2012 Elsevier Ltd. All rights reserved.
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