Journal
MATERIALS RESEARCH BULLETIN
Volume 47, Issue 2, Pages 409-412Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2011.11.009
Keywords
Ceramics; Multilayer; Thin films; Ferroelectricity
Categories
Funding
- Korea Research Foundation (KRF)
- Korea government (MEST) [2009-0077690]
- National Research Foundation of Korea [2009-0077690] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Multiferroic BFO/PZT multilayer films were fabricated by spin-coating method on the (1 1 1)Pt/Ti/SiO2/Si substrate alternately using PZT(30/70), PZT(70/30) and BFO alkoxide solutions. The structural and ferroelectric properties were investigated for uncooled infrared detector applications. The coating and heating procedure was repeated six times to form BFO/PZT multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as Bi2Fe4O3. The thickness of BFO/PZT multilayer film was about 200-220 nm. The ferroelectric properties such as dielectric constant, remnant polarization and pyroelectric coefficient were superior to those of single composition BFO film, and those values for BFO/PZT(70/30) multilayer film were 288, 15.7 mu C/cm(2) and 9.1 x 10(-9) C/cm(2) K at room temperature, respectively. Leakage current density of the BFO/PZT(30/70) multilayer film was 3.3 x 10(-9) A/cm(2) at 150 kV/cm. The figures of merit, F-v for the voltage responsivity and F-D for the specific detectivity, of the BFO/PZT(70/30) multilayer film were 6.17 x 10(-11) Ccm/J and 6.45 x 10(-9) Ccm/J, respectively. (C) 2011 Elsevier Ltd. All rights reserved.
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