Journal
MATERIALS RESEARCH BULLETIN
Volume 44, Issue 8, Pages 1709-1711Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2009.04.001
Keywords
Thin films; Sputtering; Dielectric properties
Categories
Funding
- Nangyang Technological University [LKY 1/08]
- Ministry of Education, Singapore [ARC 04/06]
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In microwave tunable devices, one of the major challenges encountered is the simultaneous minimization of the material's dielectric loss and maximization of dielectric tunability. In this work, Ba0.6Sr0.4TiO3 thin film with the thickness of 300 nm was deposited on Pt/SiO2/Si substrates using radiofrequency magnetron sputtering technique, and its dielectric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 degrees C, well-crystallized Ba0.6Sr0.4TiO3 film was deposited. The dielectric constant and dielectric loss of the film at 100 kHz are 300 and 0.033, respectively. Due to the good crystallinity of the Ba0.6Sr0.4TiO3 films deposited by radio-frequency magnetron sputtering, high dielectric tunability up to 38.3% is achieved at a low voltage of 4.5 V. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
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