Journal
MATERIALS LETTERS
Volume 234, Issue -, Pages 187-190Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2018.09.101
Keywords
beta-SiC nanowires; Crystal growth; Crystal structure; Chemical vapour deposition; Photoluminescence
Funding
- National Natural Science Foundation of China [51672253, 51872266]
- Ministry of State Key Laboratory of Metallurgical Refractories, Wuhan University of Science and Technology [G201601]
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beta-SiC nanowires (NWs) have been successfully synthesized in the absence of Ar gas protection by a simple, catalyst-free chemical vapour deposition (CVD) using silicon, trace nanoscale SiO2 particles, and phenolic resin powders as starting materials. The beta-SiC NWs formed by a vapour-solid growth mechanism, with growth along the [1 1 1] direction. They were well-crystallized, with various morphologies (chain-bead, bamboo-shaped, and linear), and had lengths of up to dozens of microns and diameters of 80-650 nm. Moreover, they exhibited excellent blue-green photoluminescence properties due to the presence of stacking faults and amorphous SiO2. This novel CVD technique is green, low cost, and suitable for large scale production of SiC NWs. (C) 2018 Elsevier B.V. All rights reserved.
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