Journal
MATERIALS LETTERS
Volume 112, Issue -, Pages 12-15Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2013.08.120
Keywords
Tungsten oxide; Nanowires; Porous silicon; Composites; Sensors; Semiconductors
Funding
- National Natural Science Foundation of China [60771019, 61271070, 61274074]
- Tianjin Key Research Program of Application Foundation and Advanced Technology, China [11JCZDJC15300]
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Tungsten oxide (WO3) nanowires with diameters of 20-30 nm and lengths of 1-2 mu m were grown directly on the porous silicon (PS) through thermal annealing of tungsten film. The as-obtained WO3 nanowires/PS composites were investigated by field emission scanning electron microscopy and X-ray diffraction. The morphology of products was greatly affected by the annealing temperature, and the optimal annealing temperature was 700 degrees C. In addition, NO2-sensing properties of WO3 nanowires/PS composites were also investigated. It was found that the sensor based on WO3 nanowires/PS composites had a good response and selectivity to NO2 at a low operating temperature of 150 degrees C. The lowest concentration of NO2 detected was 250 ppb. The novel WO3 nanowires/PS composites improved sensing properties which are significant for future applications. (C) 2013 Elsevier B.V. All rights reserved.
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