Journal
MATERIALS LETTERS
Volume 108, Issue -, Pages 50-53Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2013.06.063
Keywords
Thin films; Semiconductors; ZnO; Inverted polymer solar cells; Light-trapping
Funding
- National Basic Research Program of China [2011CBA00705, 2011CBA00706, 2011CBA00707]
- Major Science and Technology Support Project of Tianjin City [11TXSYGX22100]
- Natural Science Foundation of Zhejiang Province [LQ13F050007]
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Different morphology zinc oxide (ZnO) thin films were prepared by a sol-gel method using two annealing rates and used as the electron transport layers in inverted polymer solar cells. The morphology, optical and structure properties were performed by AFM, UV-vis and XRD in order to study the effect of annealing rates. The undulating morphology of ZnO film fabricated at a slow heating rate of 9 degrees C/min possesses a rougher surface than that of ZnO film annealed at the fast heating rate of 56 degrees C/min, which provides efficient light-trapping and increases photon absorption. The resulting device shows 12.6% and 6.7% improvement in short current density and fill factor, respectively, compared with the device based on the rapidly annealed ZnO; a maximum power conversion efficiency of 2.55% was achieved. (C) 2013 Elsevier B.V. All rights reserved.
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