Journal
MATERIALS LETTERS
Volume 73, Issue -, Pages 89-91Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2012.01.018
Keywords
Cu2ZnSnS4; Vacuum thermal evaporation; Thin film; Solar energy materials
Funding
- National Natural Science Foundation of China [51072043]
- National Basic Research Program of China [2011CBA00700]
- Anhui Province Science and Technology Plan Project of China [2010AKND0794]
- College Natural Science Foundation of Anhui Province [KJ2010A266]
Ask authors/readers for more resources
Cu2ZnSnS4 (CZTS) thin films were successfully deposited using vacuum thermal evaporation from single quaternary CZTS semiconducting material powder source, followed by annealing at 300 degrees C for 40 min under high purity N-2 atmosphere. X-ray diffraction (XRD) patterns indicated that as-deposited CZTS thin films transformed from amorphous state into crystalline state with kesterite structure after annealing. Energy dispersive X-ray spectroscopy (EDS) determined the compositions of the CZTS thin films were Zn-poor, Sn-rich and S-rich. Scanning electron microscope (SEM) images, ultraviolet-visible-near infrared (UV-Vis-NIR) spectra and the Hall measurements showed the annealed CZTS thin film exhibited a smooth, densely packed and homogeneous surface, a direct band gap of 1.55 eV and a p-type conductivity. The fabricated photovoltaic device obtained a conversion efficiency of 0.36%, open-circuit voltage of 493 mV, short-circuit current density of 1.76 mA.cm(-2), and fill factor of 0.42. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available