Journal
MATERIALS LETTERS
Volume 65, Issue 23-24, Pages 3447-3449Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2011.07.085
Keywords
Thin films; Sputtering; Electrical properties; Magnetic materials
Funding
- National Natural Science Foundation of China [50772008, 90922037]
Ask authors/readers for more resources
The magnetic and electronic transport properties of the antiperovskite Mn3NiN thin film deposited on quartz substrate using magnetron sputtering were investigated. The film shows a (100) preferred orientation. It is worthwhile noting that a positive magnetoresistance (MR) effect was found in the whole measured temperature region and the maximum MR value by 31% was obtained at about 300 K under 2 T. On the other hand, when cooling from room temperature, a spin-glass behavior was also observed in the Mn3NiN film and the Tb shifted to lower temperature with increasing external magnetic field. In contrast to the bulk counterpart, the temperature dependent resistivity of the film shows a semiconductor-like behavior. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available