Journal
MATERIALS LETTERS
Volume 65, Issue 4, Pages 786-789Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2010.11.065
Keywords
Al-doped ZnO (AZO); Rapid thermal annealing; Metal-semiconductor-metal (MSM); structure; Photoelectric application; UV detection
Funding
- Ministry of Education, Science and Technology (MEST) [2010K001078]
- Korea Institute of Machinery and Materials (KIMM) [NK-155B]
- U.S. Air Force Office of Scientific Research [FA95501010154]
- MEST
- Korea research Council of Fundamental Science & Technology (KRCF)
- Sungkyunkwan University (SKKU)
- National Research Council of Science & Technology (NST), Republic of Korea [krcf-2011-1] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-50177] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A low-resistive Al-doped ZnO (AZO) film was achieved by rapid thermal annealing. A co-sputtering method was used in the initial growth of AZO films and a rapid annealing process was performed on the as-deposited AZO film under N-2 atmosphere for 3 min. An as-deposited AZO film had an optical transmittance of 84.78% at 550 nm and a resistivity of 7.8 x 10(-3) Omega cm. A rapid annealing process significantly improved the optical transmittance and electrical resistivity of the AZO film to 99.67% and 1 x 10(-3) Omega cm, respectively. The structural changes of the AZO films were investigated by X-ray diffraction and transmission electron microscopy. The high quality AZO film was used to fabricate a metal-semiconductor-metal (MSM) structure for a UV detector. The MSM device provided a stable current of 25 mu A at a bias of 2 V in a dark condition. Under UV illumination, the MSM device was highly responsive to UV light uniformly and repeatedly, and it enhanced the current by 80% at 45 mu A. This rapid thermal annealing process may provide a useful method to fabricate quality AZO films for photoelectric applications with a low thermal budget. (C) 2010 Elsevier B.V. All rights reserved.
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