4.6 Article

Dielectric enhancement of BaTiO3/BaSrTiO3/SrTiO3 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method

Journal

MATERIALS LETTERS
Volume 65, Issue 23-24, Pages 3574-3576

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2011.08.004

Keywords

Dielectric property; Thin films; Multilayer; Embedded capacitor; Sol-gel preparation

Funding

  1. National ST Major Project [2009ZX02038]

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Polycrystalline BaTiO3/Ba0.6Sr0.4TiO3/SrTiO3 (BT/BST/ST) multilayer thin films with different periodicities have been deposited on Pt/Ti/SiO2/Si substrates by using a sol-gel method. The multilayer thin films were crack free, compact and crystallized in a perovskite structure. The dielectric constant of the multilayer thin films was significantly increased and the dielectric loss was almost the same as those of uniform BT, ST and BST thin films. The dielectric constant increased with increasing stacking periodicity as the thickness of each individual layer decreased. The multilayer thin films showed excellent dielectric properties and can be promisingly used for the dielectric layer of silicon-based embedded capacitors in package substrate. (C) 2011 Elsevier B.V. All rights reserved.

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