Journal
MATERIALS LETTERS
Volume 63, Issue 2, Pages 174-176Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2008.09.056
Keywords
SiC; Nanowhiskers; Carbothermic reduction; SiO2; Activated carbon
Funding
- Ministry of Knowledge and Economy and Korea Energy Management Corporation [2006-N-PV12-P-02]
- Korean Government (MOEHRD) [KRF-2005-005-J07502]
- Korea Institute of Industrial Technology(KITECH) [B0008582, 2006-N-PV12-P-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과C6B1912, 2005-005-J07502] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The silicon carbide (SiC) nanowhiskers were obtained by a carbothermic reduction of silica (SiO2) with activated carbon at 1450 degrees C. The products were characterized by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). The Sic nanowhiskers were grown as crystalline beta-SiC with the diameter ranging from 20 to 150 nm grew along (111) direction with the length up to several tens of micrometers. Yield of beta-SiC is very high with the moderate amount of un-reacted SiO2. This is the first report on the synthesis of high yield of beta-SiC by simple direct heating method. (C) 2008 Elsevier B.V. All rights reserved.
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