Journal
MATERIALS LETTERS
Volume 63, Issue 26, Pages 2246-2248Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2009.07.038
Keywords
Electrical properties; Optical materials and properties; Sol-gel preparation; N-doped ZnO
Funding
- University of Ulsan
- National Research Foundation of Korea [과C6A1902] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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N-doped ZnO (NZO) thin films have been prepared by a sol-gel method and their electrical and optical properties have been investigated. The prepared NZO films were p-type, and had excellent electrical properties. They had an optical transparency above 85% in the visible range. The UV absorption edge was red-shifted with increasing N-doping concentration. Two emission bands were observed in the photoluminescence (PL) spectra, with one band located in the UV range and the other band consisting of green luminescence. Both UV and green emissions were enhanced with increasing N-doping concentration. (C) 2009 Elsevier B.V. All rights reserved.
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