Journal
MATERIALS LETTERS
Volume 62, Issue 4-5, Pages 633-636Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2007.06.042
Keywords
ceramics; dielectric properties; doping
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The substitution of the aliovalent dopant Cr2O3 on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging front 0.1 to 1.0%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1% Cr2O3 doped CaCu3Ti4O12 were improved with K approximate to 19,000 and tan delta approximate to 0.049 at 1 kHz. Also, 1 % Cr2O3 doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr2O3 doping is an efficient method to achieve a high-K and low loss. (c) 2007 Elsevier B.V. All rights reserved.
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