Journal
MATERIALS CHEMISTRY AND PHYSICS
Volume 219, Issue -, Pages 189-195Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2018.08.031
Keywords
Graphene; N-Octane; CVD; Synthesis temperature; Raman spectroscopy; Scanning tunneling spectroscopy
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Funding
- Brazilian agency: Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq)
- Brazilian agency: Instituto Nacional de Engenharia de Superficies (INCT-INES)
- Brazilian agency: Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior
- Brazilian agency: Fundacao de Amparo a Pesquisa no Estado do Rio de Janeiro (FAPERJ)
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We report single-layer graphene synthesis using high-carbon content N-Octane as precursor. Unlike methanol, ethanol and other liquid carbon precursors, N-Octane is oxygen free and its molecular structure is simply a common hydrocarbon. Optimal precursor pressure for synthesis was found to be at 5-20 mTorr range, as at higher partial pressures we have achieved bilayer and few-layer coverage of the copper substrates with {111} plane parallel to the surface, as revealed by Raman spectroscopy. We could lower the synthesis temperature down to 850 degrees C and still obtained graphene layers with low concentration of defects. For the complete coverage of the substrates, we report shorter than usual synthesis time, of no more than 5 min. Characterization of gra- phene layers were performed using Raman scattering spectroscopy and mapping, UV-vis transmittance as well as atomic force microscopy, scanning tunneling microscopy and scanning tunneling spectroscopy.
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