Journal
MATERIALS CHARACTERIZATION
Volume 59, Issue 2, Pages 124-128Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.matchar.2006.11.020
Keywords
ZnO : Ga; transparent conductive oxide films; magnetron sputtering; electrical and optical properties
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Gallium-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of sputtering power on the structural, electrical, and optical properties of ZnO:Ga films was investigated by X-ray diffraction, scanning electron microscopy (SEM), Hall measurement, and optical transmission spectroscopy. The lowest resistivity of the ZnO:Ga film is 4.48 x 10(-4) Omega.cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (similar to 3.3 ev). (C) 2006 Elsevier Inc. All rights reserved.
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