Journal
MATERIALS AND MANUFACTURING PROCESSES
Volume 26, Issue 11, Pages 1362-1368Publisher
TAYLOR & FRANCIS INC
DOI: 10.1080/10426914.2011.557127
Keywords
Composites; High temperature; Plasma; Processing; Raman; TGA; XPS; XRD
Funding
- IMMT (CSIR), Bhubaneswar
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Fine silicon carbide powder was synthesized from bamboo leaf in a DC thermal plasma reactor through a single step process. With an applying current of 300amp and 50V voltages, the optimum duration of conversion of silica rich bamboo leaf to silicon carbide is 20 minutes. X-ray diffraction (XRD) results reveal that the final product is identified as beta-SiC having lattice parameter a = 4.295 angstrom, which is in close agreement with the reported value of 4.347 angstrom. The scanning electron microscope (SEM) micrograph clearly shows the formation of cubical particles of beta-SiC. The micro-Raman and X-ray photoelectron spectroscopy (XPS) analysis also confirm the formation of beta-SiC phase.
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