Dynamics of Crystallization and Disorder during Annealing of P3HT/PCBM Bulk Heterojunctions

A real-time crystallographic analysis of P3HT/PCBM films during thermal annealing is reported, detailing the temporal variation of crystallization, disorder, and orientational spread during the annealing. Five P3HT/PCBM chlorobenzene solutions with different P3HT concentrations (0, 33, 50, 67, 100 wt %) were spin coated on SiO2 substrates. The thick films (similar to 100 nm) were studied during annealing (50 min at 140 degrees C), with in situ synchrotron grazing incidence X-ray diffraction (GI-XRD) and a sampling time < 8 s. For the first time, the evolution of the crystal structure is analyzed taking into account P3HT paracrystallinity. The following were observed: a predominance of edge-on P3HT lamellae in the as-spun and annealed films; changes in concentration-dependent edge-on lamellar orientation spread along the alkyl-stacking direction and paracrystalline disorder after annealing; a permanent lamellar stretching just along the alky-stacking direction after annealing; an increase in the P3HT domain size along only the alkyl-stacking direction for the edge-on lamellae, with dynamics consistent with PCBM acting as a plasticizer for P3HT; and finally, an increase in the PCBM concentration at the sample-air interface. We show that the paracrystalline correction is important to calculate correctly the domain size as deduced from GI-XRD.