Journal
APPLIED SURFACE SCIENCE
Volume 328, Issue -, Pages 140-145Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2014.11.180
Keywords
Wet chemical cleaning; Surface treatment; Intrinsic amorphous silicon; Boron emitter; Passivat ion; Annealing
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The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm(2) and below. (C) 2014 Elsevier B.V. All rights reserved.
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