Temperature change during non-contact diode laser irradiation of implant surfaces

A temperature increase of more than 10A degrees C can compromise bone vitality. Laser radiation with different wavelengths has been used for the treatment of peri-implantitis, but little is known about the effect of laser irradiation on temperature rise on the implant surface. In this study, the temperature gradient (a dagger T) generated by laser irradiation of implant surface using two diode lasers (810 nm and a 980 nm) with 2 W of power has been recorded by two thermocouples (one in the cervical area and one in the apical area) and studied. The 810-nm diode laser showed the following results: after 60 s of irradiation with 2 W of continuous mode the temperature gradient in the cervical area of the implant (a dagger Tc) was 37.2A degrees C, while in the apical area (a dagger Ta) was 27.2A degrees C. The 980-nm diode laser showed the following results: after 60 s of irradiation with 2 W continuous mode a dagger Tc was 41.1A degrees C, and a dagger Ta was 30.6A degrees C. The 810-nm diode laser with 2 W continuous mode generated a temperature increase of 10A degrees C after only 14 s. The 980-nm diode lasers groups produced a much more rapid temperature increase. In only 12 s, the continuous wave of 980 nm reached the 10A degrees C temperature rise. From the present in vitro study it was concluded that the irradiation of implant surfaces with diode lasers may produce a temperature increase above the critical threshold (10A degrees C ) after only 10 s.