Journal
LASER PHYSICS LETTERS
Volume 9, Issue 1, Pages 10-14Publisher
IOP PUBLISHING LTD
DOI: 10.1002/lapl.201110086
Keywords
diode-pumped; passively Q-switched; 1.08 microns; Nd:SSO crystal
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Funding
- China Postdoctoral Science Foundation [200801416, 20080430191]
- Postdoctoral Science Foundation of Shandong Province [200803055]
- Independent Innovation Foundation of Shandong University, IIFSDU [2009TS107]
- National Natural Science Foundation of China for Youths [61008024]
- National High Technology Research and Development Program of China [2009AA03Z435]
- National Natural Science Foundation of China [60938001, 60908030]
- Science and Technology Commission of Shanghai Municipality [09JC1415300]
- Shanghai Institute of Ceramics [Y04ZC5150G]
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Diode pumped continuous wave operation and passively Q-switched performances of a Nd:Sc2SiO5 laser crystal at 1.08 microns have been demonstrated. A maximum continuous wave average output power up to 1.86 W has been obtained, corresponding to an optical conversion efficiency of 20.7% and a slope efficiency of 30.4% with respect to the absorbed pump power. With a Cr4+:YAG wafer used as the saturable absorber, a passively Q-switched Nd:Sc2SiO5 laser generated a pulse as short as 22.5 ns at a repetition rate of 20 kHz. The maximum pulse energy of 44.8 mu J was achieved, corresponding to a maximum pulse peak power of 1.66 kW. (C) 2012 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA)
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