Femtosecond laser ablation behavior of gold, crystalline silicon, and fused silica: a comparative study

The influence of target material on the ablation behavior of femtosecond laser pulses was investigated. Three different materials, representing the spectrum of electrical conductivities, were selected: a dielectric (fused silica), a semiconductor (crystalline silicon), and a metal (gold). Ablation was performed in ambient air using a Ti:sapphire laser, which emits radiation at a wavelength of 785 nm and a pulse width of 130 fs. Surface morphology and ablation depth were evaluated using optical and scanning electron microscopy. Significant changes in surface morphology were observed with variation of the fluence and number of laser pulses. In all materials, two different ablation regimes were distinguished depending on the fluence. Ablation threshold, which was determined from the relationship between crater diameter squared and the logarithm of laser energy, was found to depend on the number of laser pulses incident on the same spot (i.e. incubation phenomenon).