Journal
LANGMUIR
Volume 30, Issue 20, Pages 5716-5725Publisher
AMER CHEMICAL SOC
DOI: 10.1021/la500555w
Keywords
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Funding
- Division of Chemical Sciences, Geosciences, and Biosciences, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-FC02-04ER15533]
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Semiconductor nanostructures are attractive for designing low-cost solar cells with tunable photoresponse. The recent advances in size- and shape-selective synthesis have enabled the design of quantum dot solar cells with photoconversion efficiencies greater than 5%. To make them competitive with other existing thin film or polycrystalline photovoltaic technologies, it is important to overcome kinetic barriers for charge transfer at semiconductor interfaces. This feature article focuses on the limitations imposed by slow hole transfer in improving solar cell performance and its role in the stability of metal chalcogenide solar cells. Strategies to improve the rate of hole transfer through surface-modified redox relays offer new opportunities to overcome the hole-transfer limitation. The mechanistic and kinetic aspects of hole transfer in quantum dot solar cells (QDSCs), nanowire solar cells (NWSCs), and extremely thin absorber (ETA) solar cells are discussed.
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