Journal
APPLIED SURFACE SCIENCE
Volume 324, Issue -, Pages 152-159Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2014.10.091
Keywords
P-type; Nanocrystalline silicon; Heterojunction solar cells; PECVD
Categories
Funding
- Tianjin Nature and Science Foundation [10JCYBJC03000]
- Hebei Education Department Foundation [Z2010304]
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P-type hydrogenated nanocrystalline silicon (p-nc-Si:H) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) at 200 degrees C, using diborane (B2H6) diluted in hydrogen to a concentration of 1% as the doping gas. The influence of hydrogen dilution, boron doping and layer thickness on the structural, optical and electronic properties of nc-Si:H films was systematically studied by transmission, Raman, small-angle X-ray diffraction (SAXD), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared (FTIR) spectroscopies. The 20 nm thick nc-Si film with dark conductivity of 0.005 S/cm and crystalline volume fraction of 43.89% was obtained. By employing p-nc-Si:H as emitter layers, SHJ solar cells were fabricated. It was found that fill factor (FF) was significantly improved with increasing the p-layer thickness from 10 to 20 nm. Moreover, the SHJ solar cell with V-oc of 576 mV, J(sc) of 34.49 mA/cm(2), FF of 74.28%, and eta of 16.63% was obtained. (C) 2014 Elsevier B.V. All rights reserved.
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