Phase Discrimination through Oxidant Selection in Low-Temperature Atomic Layer Deposition of Crystalline Iron Oxides

Control over the oxidation state and crystalline phase of thin-film iron oxides was achieved by low-temperature atomic layer deposition (ALD), utilizing a novel iron precursor, bis(2,4-methylpentadienyl)iron. This low-temperature (T = 120 degrees C) route to conformal deposition of crystalline Fe3O4 or alpha-Fe2O3 thin films is determined by the choice of oxygen source selected for the second surface half-reaction. The approach employs ozone to produce fully oxidized alpha-Fe2O3 or a milder oxidant, H2O2, to generate the Fe2+/Fe3+ spinel, Fe3O4. Both processes show self-limiting surface reactions and deposition rates of at least 0.6 angstrom/cycle, a significantly high growth rate at such mild conditions. We utilized this process to prepare conformal iron oxide thin films on a porous framework, for which alpha-Fe2O3 is active for photocatalytic water splitting.