4.6 Article

Interplay of Electrical Forces for Alignment of Sub-100 nm Electrospun Nanofibers on Insulator Gap Collectors

Journal

LANGMUIR
Volume 26, Issue 24, Pages 19022-19026

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/la102209q

Keywords

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Funding

  1. US NSF [EFRI 0736002, ECCS 0701505]
  2. Nano Science and Technology Program
  3. Academia Sinica
  4. National Science Council [96-2112-M-001-024-MY3]

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We present a quantitative design methodology for optimizing insulator gap width, gap resistivity, and collector to needle height for the alignment of sub-100 nm electrospun nanofibers at insulator gaps of metal collectors. Enhancement of the spatial extent of alignment forces at insulator gaps, due to the concerted action of attractive stretching forces from the modified electric fields and repulsive forces from residual charges on undischarged fibers in the gap, is studied. At gap widths considerably smaller than the collector to needle height (<2%), the spatial extent of stretching forces is large as evidenced by successive reduction in nanofiber size with gap width; however, the low magnitude of repulsive forces limits the degree of nanofiber alignment. At successively larger gap widths less than the needle height, the spatial extent of the stretching forces is gradually restricted toward the metal-insulator edges, while the influence of repulsive forces is gradually extended across the rest of the spatial extent of the gap, to cause enhanced nanofiber alignment through the concerted action of these forces. At gap widths greater than the needle height, the limited spatial extent and lowered maximum value of the stretching forces at the metal-insulator edge reduces their influence on fiber stretching and alignment. The collection of sub-100 nm electrospun poly(lactic acid-co-glycolic acid) nanofibers with a good degree of alignment (<= 10 degrees deviation) is found to require intermediate size gaps (similar to 2% of needle height) of high resistivity (>= 10(12) ohm-cm), to enhance the spatial extent of stretching forces while maintaining the dominance of repulsive forces due to residual charge across a majority of the spatial extent of the gap.

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