Journal
LANGMUIR
Volume 26, Issue 6, Pages 3771-3773Publisher
AMER CHEMICAL SOC
DOI: 10.1021/la903578r
Keywords
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Funding
- Nanoscale Science and Engineering Initiative of the National Science Foundation [EEC-0647560, ECS-0506802]
- Office of Naval Research Young Investigator Award [N00014-05-1-0563, N00014-09-1-0180]
- DOE/BES [DE-AC02-06CH11357]
- MRSEC through NSF [DMR-0520513]
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A novel step-by-step method employing microwave-assisted Sonogashira coupling is developed to grow fully conjugated organosilicon structures. As the first case study, p-(4-bromophenyl)acetylene is covalently conjugated to a p-(4-iodophenyl)acetylene-derived irionolayer on a Si(111) surface. By bridging the two aromatic rings with C C, the pregrown monolayer is structurally extended outward from the Si surface, forming a fully conjugated (p-(4-bromophenylethynyl)phenyl)vinylene film. The Film growth process, which reaches 90% yield after 2 h, is characterized thoroughly at each step by using X-ray reflectivity (XRR), X-ray standing waves (XSW), and X-ray fluorescence (XRF). The high yield and short reaction time offered by microwave-assisted surface Sonogashira coupling chemistry make it a promising strategy for functionalizing Si surfaces.
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