Journal
LANGMUIR
Volume 25, Issue 8, Pages 4274-4278Publisher
AMER CHEMICAL SOC
DOI: 10.1021/la804267n
Keywords
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Funding
- KOSEF
- Korea government (MEST) [R01-2008000-10551-0, R11-2005-048-00000-0]
- Korea Ministry of Commerce Industry and Energy [10030559]
- Korea Research Foundation Grant
- Korean Government [KRF-2008-D00264]
- Kookmin University
- NRL [R0A-2007-000-20105-0]
- National Research Foundation of Korea [313-2008-2-D00264, 2008-0060665, R11-2005-048-01005-0, 2008-0058617] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO2 film by thermal annealing. A top electrode (Ag electrode) was then coated onto the TiO2 films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (about 0.6 V-RESET and 1.4 V-SET). In addition, it was confirmed that the electrical properties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to those of vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. The reported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devices allowing a facile solution processing.
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