Journal
PROGRESS IN PHOTOVOLTAICS
Volume 23, Issue 11, Pages 1642-1648Publisher
WILEY
DOI: 10.1002/pip.2603
Keywords
Si thin film; solar cell; cuprous oxide; heterojunction solar cell; buffer layer
Funding
- Energy International Collaboration program of Korea Institute of Energy Technology Evaluation and Planning grant - Korea Government Ministry of Knowledge Economy [2011-8520010-040]
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [2014003314]
- New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant - Korea Ministry of Trade, Industry and Energy [20113010010140, 20123010010150]
- Korea Institute of Materials Science [2014-PNK3670]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20113010010140, 20123010010150] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We showed that thin n-type CuOx films can be deposited by radio-frequency magnetron reactive sputtering and demonstrated the fabrication of n-CuOx/intrinsic hydrogenated amorphous silicon (i-a-Si:H) heterojunction solar cells (HSCs) for the first time. A highly n-doped hydrogenated microcrystalline Si (n-mu c-Si:H) layer was introduced as a depletion-assisting layer to further improve the performance of n-CuOx/i-a-Si:H HSCs. An analysis of the external quantum efficiency and energy-band diagram showed that the thin depletion-assisting layer helped establish sufficient depletion and increased the built-in potential in the n-CuOx layer. The fabricated HSC exhibited a high open-circuit voltage of 0.715V and an efficiency of 4.79%. Copyright (c) 2015 John Wiley & Sons, Ltd.
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