Journal
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Volume 61, Issue 2-4, Pages 46-62Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pcrysgrow.2015.10.002
Keywords
MOVPE; Metastable semiconductors; Dilute nitrides; Dilute bismides; TEM
Funding
- German Science Foundation (DFG) [GRK 1782, VO805/4, VO805/5]
- German Ministry for Education and Research (BMBF)
- European Union
- Alexander-von-Humboldt foundation
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III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP, become metastable if atoms with significantly smaller or larger covalent radius than the matrix atoms are alloyed. Examples are the incorporation of Boron, Nitrogen and Bismuth in the above-mentioned materials. The resulting multinary compound semiconductors, like for example (Ga,In)(N,As), Ga(N,As,P) and Ga(As,Bi), are extremely interesting for several novel applications. The growth conditions, however, have to be adopted to the metastability of the material systems. In addition, structure formation can occur which is different from stable materials. This paper summarizes our current knowledge on growth characteristics of several metastable materials. Mainly examples for Metal Organic Vapor Phase Epitaxy (MOVPE) are given. The MOVPE growth characteristics are compared to selected examples using Molecular Beam Epitaxy growth to highlight that the observed growth characteristics are intrinsic for the studied metastable material systems. Furthermore, structural peculiarities of dilute borides, nitrides and bismides occurring during growth as well as in growth interruptions are summarized and correlated to the growth conditions. (c) 2015 Elsevier Ltd. All rights reserved.
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