Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 27, Issue 6, Pages 2512-2517Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3253650
Keywords
electron resists; shot noise
Funding
- European Community's Seventh Framework Programme [214945-MAGIC]
Ask authors/readers for more resources
Electrical characteristics of devices depend on the line edge roughness (LER). LER contributes to the off-state leakage budget and short-channel effect. Therefore, it has to be controlled during the lithography step since it strongly impacts the final component's roughness. This work aims at the characterization of LER dependence on the beam acceleration voltage. Usually publications consider many lithography parameters that can influence LER. Different resists were exposed to beam acceleration voltage from 5 to 50 kV. Thus, only two parameters that influence LER varied during experiments for a given resist: the exposure dose (i.e., shot noise) and the spot size. Then, simulations were carried out with those parameter variations. The impact of other LER contributors was considered as constant. Comparison between model and experimental results allows one to link resist sensitivity, exposure time, and LER.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available