Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 27, Issue 3, Pages 1741-1745Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3138002
Keywords
cadmium compounds; excitons; II-VI semiconductors; localised states; photoluminescence; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds
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ZnO/CdxZn1-xO double heterostructures grown on a-plane sapphire substrates by pulsed-laser deposition were investigated concerning their photoluminescence properties. The localization of excitons in the CdxZn1-xO alloys were studied and analyzed with temperature dependent photoluminescence measurements from T=2 K up to room temperature. The temperature dependence of the Huang-Rhys factor was used to calculate the fraction of strongly localized excitons for this temperature range. The depth of the localization potentials is estimated using two different methods.
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