Related references
Note: Only part of the references are listed.Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)
L. Becerra et al.
APPLIED PHYSICS LETTERS (2007)
Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides
C. Merckling et al.
MICROELECTRONIC ENGINEERING (2007)
Comparison of modeling approaches for the capacitance-voltage and current-voltage characteristics of advanced gate stacks
P. Palestri et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy
C. Merckling et al.
APPLIED PHYSICS LETTERS (2006)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
The interface between single crystalline (001) LaAlO3 and (001) silicon
DO Klenov et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy
XB Lu et al.
APPLIED PHYSICS LETTERS (2004)
High quality, high-k gate dielectric:: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer
L Yan et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2003)