Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 6, Pages 1933-1936Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.2998730
Keywords
MOCVD; nanostructured materials; photoconductivity; photodetectors; photoluminescence; ultraviolet detectors; zinc compounds
Funding
- Korea Science and Engineering Foundation [R01-2006-00010230-0(2006)]
- Ministry of Commerce, Industry and Energy (MOCIE) [RTI04-01-04]
- Korean Government (MOEHRD) [(KRF-2005-005-J13101), KRF2007-521-D00118]
- National Research Foundation of Korea [과C6A1906, 2005-005-J13101, 2007-521-D00118] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A high-density vertically well-aligned ZnO nanoneedle array was fabricated on a ZnO-buffer film on silicon substrates by metal-organic chemical vapor deposition at a growth temperature of 480-500 degrees C. Highly crystalline ZnO nanoneedle arrays showed a strong near-bandedge emission at 380 nm in room-temperature photoluminescence. A simple ultraviolet (UV) sensor was fabricated by evaporating a Ag electrode on the ZnO nanoneedle array. The photoresponse results showed very high photocurrent (similar to 10(-4) A) from ZnO nanoneedles compared to a single-nanowire sensor (similar to 10(-8) A), indicating high sensitivity of the photosensor. It also showed fast rise and decay times in UV-on/off switching measurements.
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