4.2 Article

Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 6, Pages 1960-1963

Publisher

A V S AMER INST PHYSICS
DOI: 10.1116/1.3021371

Keywords

boron; doping profiles; elemental semiconductors; gold; high-speed optical techniques; impurities; island structure; nanotechnology; nanowires; semiconductor growth; semiconductor quantum wires; silicon

Funding

  1. ANR [ANR06-Nano-001-01]
  2. Federation Universitaire et Polytechnique de Lille

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This article reports on the growth of Au islands on the Si(111) surface as a function of the Au evaporation rate and the temperature of the surface in ultrahigh vacuum. By controlling the density of the Au islands and their size, it is possible to subsequently grow single vertically oriented Si nanowires on top of (111)-oriented silicon micropillar and analyze their chemical composition at the atomic scale with the femtosecond laser assisted tomographic atom probe. Three-dimensional images of the atom distribution in the nanowire, in particular, the distribution of boron impurities, are obtained and compared to the intended impurity concentration.

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